Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
By Yu-Chen Shen, Jonathan J. Wierer, Michael R. Krames, M. Ludowise, M. Misra, F. Ahmed, A. Kim, G. Mueller, J. Bhat, S. Stockman and 1 more. SPIE OPTO, 2003
136 citations recorded by the source corpus.
Optical cavity effects have a significant influence on the extraction efficiency of InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes (FCLEDs). Light emitted from the quantum well (QW) self-interferes due to reflection from a closely placed reflective metallic mirror. These interference patterns couple into the escape cone and cause significant changes in the extraction efficiency as the distance between the QW and the metallic mirror varies. In addition, the radiative lifetime of the QW also changes as a function of the distance between the QW and the mirror surface. Experimental results from packaged FCLEDs, supported by optical modeling, show that a QW placed at a neighboring position corresponding to a minimum in overall light extraction. Furthermore, the optical model and experimental data are used to estimate the absolute internal quantum efficiency.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/0b0c4f32347acf57a10cb8cb37f6f8184f8a6a45
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In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- Enhancement of light extraction from light emitting diodes (2011, unknown): “[548,110].”
- Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (2007, background): “A simplified half-cavity model is sufficient to describe the overall effect, and we may term the half-cavity length [38].”