Surface Recombination Measurements on III-V Candidate Materials for Nanostructure Light-Emitting Diodes

By M. Boroditsky, I. Gontijo, M. Jackson, R. Vrijen, Eli Yablonovitch, Thomas F. Krauss, Chuan-cheng Cheng, Axel Scherer, R. Bhat, M. Krames. 2000

164 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Surfaces, Coatings and Films

View Paper: https://www.semanticscholar.org/paper/dbe08d795c69694e8ee691e9b86241aa616ccaf3

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Michael R. Krames
2. Toshihiko Baba
3. M. Crawford
4. S. Karpov
5. Thomas F. Krauss
6. A. I. Zhmakin
7. Seyedali Mirjalili
8. Andrew Lewis

In Electrical and Electronic Engineering

1. Michael R. Krames
2. Toshihiko Baba
3. Thomas F. Krauss
4. A. I. Zhmakin
5. Seyedali Mirjalili
6. Andrew Lewis

In Surfaces, Coatings and Films

1. Toshihiko Baba
2. A. I. Zhmakin

Citations in the corpus

• III -nitride photonic-crystal light-emitting diodes with high extraction efficiency (2009, background): “Although surface recombination is low in iii -nitrides compared to other iii – v compound”
• Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (2007, background): “thin active regions and the relatively low carrier surface recombination velocity of GaN [49].”
• Low-threshold lasing and Purcell effect in microdisk lasers at room temperature (2003, background): “Moreover, the GaInAsP compound materials allow a low-threshold lasing and the Purcell effect at room temperature, since the surface recombination velocity of GaInAsP is one to two orders of magnitude lower than that of GaAs [4], [11]–[13].”