InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode

By M. Yamada, Tomotsugu Mitani, Y. Narukawa, Shuji Shioji, I. Niki, Shinya Sonobe, Kouichiro Deguchi, M. Sano, T. Mukai. 2002

341 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/857a480d4621f6eb9f142f9ec3f34ed4c73588ab

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In Biomedical Engineering

1. Michael R. Krames
2. M. Kneissl
3. J. Rass

In Condensed Matter Physics

1. Michael R. Krames
2. J. Rass
3. M. Kneissl
4. G. Mueller
5. R. Mueller-Mach
6. M. Crawford

In Electronic, Optical and Magnetic Materials

1. M. Kneissl
2. J. Rass

Citations in the corpus

• 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam (2010, background): “13 ), device configurations such as patterned substrate”
• III-Nitride Ultraviolet Emitters: Technology and Applications (2015, methodology): “Other approaches to reduce the defect density include the growth on nano-patterned sapphire substrates [29, 77], the use of short period AlGaN superlattices [78] as well as low temperature AlN or SiNx interlayers [18, 79].”
• Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates (2006, background): “Besides, geometrical shape of the sapphire patterns can effectively enhance light extraction efficiency by scattering or redirecting the guided-light inside an LED chip to find escaping cones [ 7 ], [10], [11].”
• Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (2007, background): ““CC(PS)” refers to the case of patterned sapphire substrate [34].”