Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

By K. Szot, W. Speier, G. Bihlmayer, Rainer Waser. Nature Materials, 2006

1,567 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4bdc47dce0e9b4af07e435500cb06160550c27ff

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Rainer Waser
3. R. Bruchhaus
4. Federico Nardi
5. David C. Gilmer
6. Simone Balatti
7. S. Larentis
8. Masakazu Aono

In Materials Chemistry

1. Rainer Waser
2. R. Bruchhaus
3. Daniele Ielmini
4. Masakazu Aono

Citations in the corpus

• Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling (2012, background): “In most cases, the resistance change in metal oxides is due to the formation of a conductive filament (CF), which is then subsequently dissolved and reconstructed through localized redox [3], [4] or ion-migration processes [2], [5]–[10].”