Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
By S. Larentis, B. Fallahazad, E. Tutuc. 2012
524 citations recorded by the source corpus.
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/b61e26c76c30d262a0453843915d21a2ae9c1c5a
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In Materials Chemistry
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Citations in the corpus
- Chemical vapor deposition growth of monolayer MoSe2 nanosheets (2014, background): “Several bottom-up syntheses of thin films and clusters of MoSe2 have been reported [26–31], yet most studies of single layers are based on top-down, mechanically-exfoliated monolayers using Scotch tape [32, 33].”
- Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. (2014, background): “The first reports of temperature- dependent transport in ultrathin MoS2 revealed variable range hopping98 or thermally activated101 transport as opposed to the band-like transport observed in bulk single crystals.15 Following improvements in sample quality and device processing, band-like transport ”
- Chemical vapor deposition growth of crystalline monolayer MoSe2. (2014, methodology): “The typical electrical performance data of MoSe2 FETs is presented in Figure 5b; all the fabricated devices displayed n-type behavior, consistent with results from mechanically exfoliated samples.(23) Field effect electron mobilities can be estimated using the equation μ= [dId/dVbg] [L/(WCgVd)], whe”