Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

By Heng-Yuan Lee, Pang-Shiu Chen, Tain-Shun Wu, Yu-Hsiu Chen, Ching-Hua Wang, P. Tzeng, C. H. Lin, Frederick T. Chen, C. Lien, M. Tsai. 2008 IEEE International Electron Devices Meeting, 2008

566 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/ee8e2bbbb36d792b04be774500497355d232ea4b

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In Electrical and Electronic Engineering

Citations in the corpus

State of the art of metal oxide memristor devices (2016, background): “Studies on TiN/HfO2/TiN memristor reveal that the introduction of a thin Ti buffer layer into the MIM structure induces the formation of a TiOX/HfOX bi-layer, which increases the resistance range and improves the overall switching speed and endurance of the device when compared to the performance of”
Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems (2016, background): “This typical bipolar switching behavior can be explained by the formation and rupture of a conductive filament (CF) involving oxygen vacancies (V0), which were generated by a chemical reaction between the HfO2 and Ti layers [10].”
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM (2013, background): “HfO2/metal cap bipolar RRAM stacks already demonstrated very promising reliability performance approaching practical application [2], [4].”
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth (2011, methodology): “The maximum current during set was maintained equal or below a compliance current IC by the series connection of the RRAM device with a MOS transistor, where the saturated drain current was dictated by the applied gate voltage [19].”
Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance (2010, background): “The memory device with significantly improved reliability, sub ns switching speed, and robust endurance (1010 cycles) promises its application in next generation NVM. References [1] H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien and M.-J. Tsai, “”
$\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity (2011, background): “the dielectrics [3], which leads to the reduction of the first switching voltage (forming) and the resistance of fresh oxide, as compared to the SL HfOx-based devices.”
A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations (2013, methodology): “Hence, multilevel HRS can be achieved with different stop voltages during the RESET process [27].”
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, methodology): “Figure 9 shows the measured and calculated R (a) and Ireset (b) in oxide RRAM for various materials, including HfOx [37, 46, 60], TiOx [76], and HfOx/ ZrOx stacks [77].”
Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, background): “NiO [19] NiO [38] NiO [60] CuO [56] Ti:NiO [57] HfO2 [58] (a)”
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study (2012, methodology): “In particular, the set operation in the RRAM based on HfOx [8], NiO [4], [28], [29], and CuO [30] were controlled by an”
Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions (2009, background): “Among a large variety of binary TMOs explored for ReRAM applications, such as NiO [2], TiO2 [3], ZrO2 [4]–[7], and HfO2 [8], the ZrO2-based film is one of the most promising high-κ dielectric materials and is fully compatible with the present CMOS technology [4]–[7].”