Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

By Rainer Waser, Regina Dittmann, G. Staikov, K. Szot. Advances in Materials, 2009

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Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, background): “concepts based on nanoionic transport and redox reactions on the nanoscale, induced by electrical stimulation [3].”
State of the art of metal oxide memristor devices (2016, background): “The ECM mechanism relies on the oxidative interfacial dissolution of an active metal electrode, followed by subsequent cation migration across an ion-conducting electrolyte layer, acting as an insulator [11].”
Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications (2011, methodology): “CROSSBAR array architectures based on resistiveswitching (RS) elements have been considered for the next-generation nonvolatile memory devices and reconfigurable logic circuits because of their ultimate scaling potential [1].”
Recent Progress in Phase-Change Memory Technology (2016, neutral): “[6], [7].”