A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.

By Myoung-Jae Lee, Chang Bum Lee, Dongsoo Lee, Seung Ryul Lee, Man Chang, J. Hur, Young-Bae Kim, Changjung Kim, D. Seo, S. Seo and 3 more. Nature Materials, 2011

2,083 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/ca75bb4d0cc01ee389ab3cc5161499b12fb136d6

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In Electrical and Electronic Engineering

1. Daniele Ielmini
2. H. Philip Wong
3. Shimeng Yu
4. Ximeng Guan
5. Federico Nardi
6. David C. Gilmer
7. S. Larentis
8. Simone Balatti

Citations in the corpus

• Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study (2012, background): “This might be due to the relatively large electrode area, since a deviation from constant R was observed in recent works addressing nanoscaled RRAMs [12], [23].”