Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

By K. Kinoshita, K. Tsunoda, Yoshihiro Sato, H. Noshiro, S. Yagaki, M. Aoki, Y. Sugiyama. 2008

274 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices (2011, background): “, NiO [5]–[8], TiO2 [9]–[11], and HfO2 [12]–[20]), perovskite-type oxides [21]–[23], silicon oxides [24], [25], and even single-molecule systems [26].”
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth (2011, methodology): “Similar behaviors were shown for other RRAM devices based on metal oxides (HfOx/ZrOx [2], NiO [3], [4], [20], TiOx [21]) or based on cation migration in Ag-doped GeSe [22]–[24] and Cu-doped SiO2 [23].”
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study (2012, methodology): “In particular, the set operation in the RRAM based on HfOx [8], NiO [4], [28], [29], and CuO [30] were controlled by an”
Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, methodology): “This can be controlled either by the CC [38,56–58] or by the saturated drain current of the select transistor in one cell–one transistor (1T1R) structures [19,59,60].”