Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

By P. Bergman, Heinz Lendenmann, P. Nilsson, U. Lindefelt, P. Skytt. 2001

364 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b2dc8504b5d047d0bedd76d6c06c6f3a20e3d1bd

How researchers see this paper

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In Electrical and Electronic Engineering

1. Vincenzo Giannini
2. Anant K. Agarwal
3. Joshua D. Caldwell
4. S. Shikata
5. T. Reinecke
6. S. A. Maier
7. Zheng Chen
8. Pierre Berini

Citations in the corpus

• Single crystal diamond wafers for high power electronics (2016, background): “TSD and BPD dislocations are very critical for MOSFETcharacteristics[45], TSD leadstolower breakdownvolt-ages [46] and BPD in fl uences the forward characteristics in bipolar devices [47,48].”
• Low-loss, infrared and terahertz nanophotonics using surface phonon polaritons (2015, background): “For instance, the incorporation of stacking faults in silicon carbide [69, 70, 163 – 173] could provide a means to modify the Reststrahlen band and, therefore, the SPhP response of specific nanostructures or nanophotonic/metamaterial designs.”
• A New Degradation Mechanism in High-Voltage SiC Power MOSFETs (2007, background): “This is a 0741-3106/$25.00 © 2007 IEEE well-understood phenomenon in SiC, caused by BPDs [1]–[3], [7].”