A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

By Anant K. Agarwal, H. Fatima, S. Haney, S. Ryu. IEEE Electron Device Letters, 2007

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Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices (2009, methodology): “It is reported in [18] that the phenomenon of recombination-induced stacking faults (SFs) will occur in 10 kV-level SiC MOSFETs when the body diode is conducting.”
Characterization, Modeling, and Application of 10-kV SiC MOSFET (2008, methodology): “Considering that the conduction of the body diode can induce the degradation of the SiC MOSFET [22], a 10-kV SiC JBS diode is antiparalleled with the SiC MOSFET to prevent the conduction of the body diode during a fault.”
15 kV SiC MOSFET: An enabling technology for medium voltage solid state transformers (2017, background): “The forward conduction of the PN junction may also cause significantly device degradation (loss of the forward blocking capability and/or increase of the Ron) [24], [25].”
Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation (2015, background): “There have been several papers discussing the reliability issues of the SiC MOSFETs [24], [25] under normal operating conditions.”