Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
By A. Galeckas, J. Linnros, P. Pirouz. 2002
192 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/aa3b04f37dd680d364966961f5a2957ded1299d4
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- A New Degradation Mechanism in High-Voltage SiC Power MOSFETs (2007, background): “The recombination locally provides the energy to activate dislocation glide which gives rise to SFs [7].”