Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

By N. Saks, Anant K. Agarwal. 2000

151 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f944aaae3811d2af5abef04a866ed7640e63199b