Degradation of hexagonal silicon-carbide-based bipolar devices

By M. Skowronski, S. Ha. 2006

387 citations recorded by the source corpus.

Subfields: Ceramics and Composites, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c0110750a70e368854c2e195aa71778302bed76e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Anant K. Agarwal
2. Zheng Chen

Citations in the corpus

• A New Degradation Mechanism in High-Voltage SiC Power MOSFETs (2007, background): “well-understood phenomenon in SiC, caused by BPDs [1]–[3], [7].”