Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
By N. Saks, S. Mani, Anant K. Agarwal. 2000
165 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/e3e63f51bec492ec765024534eaac320baec1fff
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
- G. Y. Chung
- J. Williams
- M. Das
- K. McDonald
- R. Weller
- L. C. Feldman
- R. Chanana
- S. Pantelides
Citations in the corpus
- Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide (2001, methodology): “has been observed experimentally for both n-SiC [4], [5] and p-SiC [6].”
- Silica on Silicon Carbide (2008, unknown): “261 , 268 , 270 , 311 Hall measurements even indicate D it values of almost 1·10 14 cm − 2.”