Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions

By J. Liu, M. Skowronski, C. Hallin, R. Söderholm, Heinz Lendenmann. 2002

181 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/cd45131fa9d186274ee69cceb31a34c528d2c9b1

How researchers see this paper

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In Electrical and Electronic Engineering

1. Anant K. Agarwal
2. Volker Presser
3. K. Nickel
4. Zheng Chen

Citations in the corpus

• A New Degradation Mechanism in High-Voltage SiC Power MOSFETs (2007, background): “It was discovered that the basal plane dislocations (BPDs) in the thick epilayers result in the formation of stacking faults (SFs) whenever the PiN diode is forward biased [2].”
• Silica on Silicon Carbide (2008, background): “143 In the context of stress-related origin of stacking faults, this defect type can be found near micropipes.”