Status and prospects for SiC power MOSFETs

By James A. Cooper, M. Melloch, Ranbir Singh, Anant K. Agarwal, J. Palmour. 2002

489 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f8fe515ff29490faa3bccd9d8edb7e6abf505b2f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Hans-Peter Nee
2. Kuang Sheng
3. Lidong Zhang
4. Zheng Chen
5. Lennart Harnefors
6. Yasser Abdel-Rady Ibrahim Mohamed
7. Andreas Petersson

Citations in the corpus

• Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs (2012, background): “Today, the most commonly used poly type is 4H which has a bandgap, a bulk electron mobility of (for low doped samples), a saturation velocity of and a high breakdown field of [1], [2].”
• High Temperature Stability and the Performance Degradation of SiC MOSFETs (2014, background): “In the following two decades, the performances of SiC devices have been improved enormously [1]–[3].”
• Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated (2012, background): “are the JFET [2], [3], BJT [4], and MOSFET [5], [6].”