Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

By S. Keller, N. Fichtenbaum, Feng Wu, David F. Brown, A. Rosales, Steven P. DenBaars, J. Speck, Umesh K. Mishra. 2007

182 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/f14abac66d08d1249ffaa89bd0ad1673ce02fb11

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In Condensed Matter Physics

1. Steven P. DenBaars
2. Umesh K. Mishra
3. Shuji Nakamura
4. H. Masui
5. J. Speck
6. B. Baliga
7. Srabanti Chowdhury

In Electronic, Optical and Magnetic Materials

1. Umesh K. Mishra
2. B. Baliga

In Mechanics of Materials

1. Steven P. DenBaars
2. Umesh K. Mishra
3. Shuji Nakamura

Citations in the corpus

• Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges (2010, background): “Another example is MOCVD’s epitaxial preference of {11̄01̄}-oriented GaN growth over {11̄01} growth while (0001̄) GaN growth is far more difficult than (0001) growth [40], [41].”