Bulk GaN crystals grown by HVPE

By K. Fujito, S. Kubo, H. Nagaoka, Tae Mochizuki, H. Namita, S. Nagao. 2009

321 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/604ea0a2b9883b563772a5c43c06eee2ecc6770b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Steven P. DenBaars
2. Umesh K. Mishra
3. Shuji Nakamura
4. Ferdinand Scholz
5. H. Masui
6. J. Speck
7. B. Baliga
8. Srabanti Chowdhury

In Materials Chemistry

1. Umesh K. Mishra
2. Steven P. DenBaars
3. Ferdinand Scholz

In Mechanics of Materials

1. Steven P. DenBaars
2. Umesh K. Mishra
3. Shuji Nakamura
4. Ferdinand Scholz

Citations in the corpus

• Semipolar GaN grown on foreign substrates: a review (2012, background): “Such substrates are cut from thick polar GaN wafers grown by hydride vapor phase epitaxy (HVPE) to a thickness of several millimeters [16, 17].”
• Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges (2010, background): “precursors and limited amount of precursor load [117].”