Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy

By Sandip Ghosh, P. Waltereit, O. Brandt, Holger Grahn, K. Ploog. 2002

220 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/0884efcb966b3342c2ccdfa9709dd07ba29cc91b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Steven P. DenBaars
2. Shuji Nakamura
3. B. Baliga

In Condensed Matter Physics

1. Steven P. DenBaars
2. Umesh K. Mishra
3. Shuji Nakamura
4. H. Masui
5. J. Speck
6. B. Baliga
7. Srabanti Chowdhury

In Mechanics of Materials

1. Steven P. DenBaars
2. Umesh K. Mishra
3. Shuji Nakamura

Citations in the corpus

• Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges (2010, background): “m-oriented GaN was not grown on sapphire because of intolerable lattice mismatch; better options were m-plane SiC [20], [21] and (100) γ-LiAlO2 [24], [48], [49].”
• X-ray diffraction of III-nitrides (2009, background): “In the absence of elastic constants, reciprocal space mapping of planes parallel to each of the major in-plane directions can be performed, giving a relative measure of inplane relaxation relative to that of the substrate and a rough measure of alloy composition [232].”