Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

By Chengbin Pan, Yanfeng Ji, Na Xiao, Fei Hui, K. Tang, Yuzheng Guo, Xiaoming Xie, F. Puglisi, Luca Larcher, Enrique Miranda and 6 more. 2017

285 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/729f314edecb12111fb7b2eeea0c894acdf959d2

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. S. Liang
2. Chen Pan
3. Chen-Yu Wang
4. Tianjun Cao
5. S. Cai
6. X. Lian
7. Miao Wang
8. Kang Xu

Citations in the corpus

• Robust memristors based on layered two-dimensional materials (2018, background): “various functionalized 2D material layers or certain grain boundaries have shown switching behaviors.(46-57) Since both the thickness and roughness of 2D layered”