Redox‐Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

By Ilia Valov. 2014

168 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering, Electrochemistry

View Paper: https://www.semanticscholar.org/paper/de82fcc24f20198ce882ddb513a2dd6694aa3a78

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Cellular and Molecular Neuroscience

1. Razali Ismail
2. Ee Wah Lim

In Electrical and Electronic Engineering

1. Razali Ismail
2. Ee Wah Lim

In Electrochemistry

1. Razali Ismail
2. Ee Wah Lim

Citations in the corpus

• Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey (2015, background): “ECM (cation-based) and VCM (anion-based) memories exhibit bipolar switching model, whereas TCM (both cation and anion-based) memory exhibits unipolar switching model [66].”