Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor

By Sneh Saurabh, Mamidala Jagadesh Kumar. IEEE Transactions on Electron Devices, 2011

430 citations recorded by the source corpus.

In this paper, we propose the application of a dual material gate (DMG) in a tunnel field-effect transistor (TFET) to simultaneously optimize the on-current, the off-current, and the threshold voltage and also improve the average subthreshold slope, the nature of the output characteristics, and immunity against the drain-induced barrier lowering effects. We demonstrate that, if appropriate work functions are chosen for the gate materials on the source side and the drain side, the TFET shows a significantly improved performance. We apply the technique of DMG in a strained double-gate TFET with a high-k gate dielectric to show an overall improvement in the characteristics of the device, along with achieving a good on-current and an excellent average subthreshold slope. The results show that the DMG technique can be applied to TFETs with different channel materials, channel lengths, gate-oxide materials, gate-oxide thicknesses, and power supply levels to achieve significant gains in the overall device characteristics.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3000a447a44a28df0a2f498c6d11d1132309a295

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In Electrical and Electronic Engineering

1. Sanjay Kumar
2. J. Madan
3. Rishu Chaujar
4. Satyabrata Jit
5. Balraj Singh
6. Kunal Singh
7. Ekta Goel

Citations in the corpus

• A Junctionless Nanowire Transistor With a Dual-Material Gate (2012, neutral): “transistors to optimize electrical characteristics [15].”
• Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability (2016, methodology): “Abundant techniques have been explored for resolving this issue such as using a smaller band gap material in the source region such as germanium [1], hetero gate dielectric TFET [2], double gate architecture [3], gate to source overlap [4], gate to drain underlap [5], dual material gate [6], n-pocke”
• 2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure (2017, methodology): “Based on the simulation studies, Sourabh and Kumar [16] and Jain et al. [17] observed that both the ON-current and SS characteristics of the TFETs could be significantly improved by replacing the SMG by a DMG structure (obtained by cascading two different metal like materials for the gate electrode)”