Dhanoop Varghese

Electrical and Electronic Engineering · 2007

A researcher in the Science corpus: 2 papers; trusts 2 researchers and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 32 citations into it; #15,955 of 16,539 by trust here, #12,348 by citations

Whom Dhanoop Varghese trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. M. A. Alam
2. Souvik Mahapatra
3. Ben Kaczer

Who trusts Dhanoop Varghese overall

1. Tibor Grasser

Papers from Dhanoop Varghese's perspective

Ordered by how strongly the researchers Dhanoop Varghese trusts endorse each paper. Same corpus, a different order for every researcher.

1. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
2. Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric (International Electron Devices Meeting)
3. Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
4. On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual)
5. Universal recovery behavior of negative bias temperature instability [PMOSFETs] (IEEE International Electron Devices Meeting 2003)
6. A comprehensive framework for predictive modeling of negative bias temperature instability (2004 IEEE International Reliability Physics Symposium. Proceedings)
7. Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements (2006 IEEE International Reliability Physics Symposium Proceedings)
8. A comprehensive model for PMOS NBTI degradation: Recent progress (Microelectronics and reliability)
9. A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)
10. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

Their papers

• Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation (2007) — 253 citations
• A comprehensive model for PMOS NBTI degradation: Recent progress (2007) — 297 citations