Changhwan Shin

Electrical and Electronic Engineering · 2011–2016

A researcher in the Science corpus: 2 papers; trusts 3 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Changhwan Shin trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Asif Islam Khan
  2. Sung Hwan Kim

Who trusts Changhwan Shin overall

  1. J. Madan

Papers from Changhwan Shin's perspective

Ordered by how strongly the researchers Changhwan Shin trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. (Nano letters (Print))
  2. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (IEEE Electron Device Letters)
  3. Germanium-source tunnel field effect transistors with record high ION/IOFF (Symposium on VLSI Technology)
  4. Low-subthreshold-swing tunnel transistors (IEEE Electron Device Letters)
  5. A new definition of threshold voltage in Tunnel FETs
  6. Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs
  7. Negative capacitance in a ferroelectric capacitor. (Nature Materials)
  8. Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor (IEEE Electron Device Letters)
  9. Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics (IEEE Electron Device Letters)
  10. Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation (International Electron Devices Meeting)

Their papers