Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs

By N. Damrongplasit, Changhwan Shin, Sung Hwan Kim, R. Vega, Tsu-Jae King Liu. IEEE Transactions on Electron Devices, 2011

174 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/165352b3d3ce326eab4e634d5955cf4ea4179d85

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In Electrical and Electronic Engineering

1. J. Madan
2. Rishu Chaujar

Citations in the corpus

• Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability (2016, methodology): “Abundant techniques have been explored for resolving this issue such as using a smaller band gap material in the source region such as germanium [1], hetero gate dielectric TFET [2], double gate architecture [3], gate to source overlap [4], gate to drain underlap [5], dual material gate [6], n-pocke”