Tunnel Field-Effect Transistors: State-of-the-Art
By Hao Lu, Alan C. Seabaugh. IEEE Journal of the Electron Devices Society, 2014
557 citations recorded by the source corpus.
Progress in the development of tunnel field-effect transistors (TFETs) is reviewed by comparing experimental results and theoretical predictions against 16-nm FinFET CMOS technology. Experiments lag the projections, but sub-threshold swings less than 60 mV/decade are now reported in 14 TFETs. The lowest measured sub-threshold swings approaches 20 mV/decade, however, the measurements at these lowest values are not based on many points. The highest current at which sub-threshold swing below 60 mV/decade is observed is in the range 1-10 nA/μm. A common approach to TFET characterization is proposed to facilitate future comparisons.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/85f837837d92bd57ab36072204607a7951807245
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In Electrical and Electronic Engineering
- Gerhard Klimeck
- Joerg Appenzeller
- Hesameddin Ilatikhameneh
- B. Novaković
- Rajib Rahman
- Yaohua Tan
- Alan C. Seabaugh
Citations in the corpus
- Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials (2015, methodology): “Recently, a method for benchmarking steep devices has been proposed, which gives insight into the local steepness of the I–V curve [42].”