Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

By Mathieu Luisier, Gerhard Klimeck. 2010

188 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5baf96b1c81cb989457bc592fb2690353b80ac3c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Ru Huang
2. Uygar E. Avci
3. Ian A. Young
4. Alan C. Seabaugh
5. Daniel H. Morris
6. Y. Qiu
7. Qianqian Huang
8. Runsheng Wang

In Electrical and Electronic Engineering

1. Ian A. Young
2. Ru Huang
3. Hao Lu
4. Uygar E. Avci
5. Alan C. Seabaugh
6. Daniel H. Morris
7. Y. Qiu
8. Qianqian Huang

Citations in the corpus

• Tunnel Field-Effect Transistors: State-of-the-Art (2014, background): “Group IV materials such as Si [11], [12] and Ge [12]–[14] exhibit smaller ON-currents resulting from their indirect band gaps and lower tunneling probability.”
• Tunnel Field-Effect Transistors: Prospects and Challenges (2015, methodology): “In order to model TFET characteristics, we used an atomistic quantum mechanical device simulator that calculates carrier density self consistently with the Poisson equation [7].”
• A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET (2014, methodology): “Considering that the full-band simulation [24] and the full quantum simulation [25] are more accurate but costly calibrated technology computer-aided design simulations are employed.”