Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

By C. Gong, Hengji Zhang, Weihua Wang, Luigi Pietro Maria Colombo, Robert M. Wallace, Kyeongjae Cho. 2013

735 citations recorded by the source corpus.

Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalcogenides (TMDs) with sizable band gaps show promise in building p-n junctions (couples) for TFET applications. Band alignment information is essential for realizing broken gap junctions with excellent electron tunneling efficiencies. Promising couples composed of monolayer TMDs are suggested to be VIB-MeX2 (Me = W, Mo; X = Te, Se) as the n-type source and IVB-MeX2 (Me = Zr, Hf; X = S, Se) as the p-type drain by density functional theory calculations.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/2c25864f0bd08c22b979f3755a5359f5311f091f

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Citations in the corpus

MXetronics: Electronic and photonic applications of MXenes (2019, background): “27 eV,[77] suggesting the possible existence of Fermi level pinning.”
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “and diverse band-alignments [32]; and (iii) lack of surface “dangling bonds” unlike conventional 3D semiconductors (Figure 1b schematically compares the surface of bulk 3D and 2D materials) allowing for the formation of pristine defect-free interfaces (especially 2D/2D vdW interfaces) [33].”
From two-dimensional materials to their heterostructures: An electrochemist's perspective (2017, methodology): “For the roup 6 TMDCs, the band gaps increase with the increasing size f M and decreasing size of X, regardless of thickness [23,62,70], s shown in Table 3, whereas the VBM and the CBM increase with he increasing size of both M and X [37,71].”
Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials (2015, methodology): “DFT-GGA has been shown to provide band gaps and effective masses in TMDs comparable to experimental measurements [26].”
Vertical heterostructures based on SnSe2/MoS2 for high performance photodetectors (2017, methodology): “Figure 1 demonstrates the schematic diagram of epitaxial growth of atomically thin SnSe2/MoS2 vdW heterostructures (further information in Methods).”