Mathieu Luisier

Electrical and Electronic Engineering · 2006–2021

A researcher in the Science corpus: 8 papers; trusts 5 researchers and is trusted by 10 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 55 citations into it; #3,768 of 16,539 by trust here, #8,802 by citations
• Atomic and Molecular Physics, and Optics — 39 citations into it; #4,483 of 7,135 by trust here, #5,156 by citations
• Biomedical Engineering — 30 citations into it; #2,307 of 10,734 by trust here, #4,472 by citations

Whom Mathieu Luisier trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Gerhard Klimeck
2. Timothy B. Boykin
3. Mark S. Lundstrom
4. Joerg Appenzeller
5. Yi Cui
6. W. Fichtner
7. M. Anantram

Who trusts Mathieu Luisier overall

1. Uygar E. Avci
2. Dmitri E. Nikonov
3. Y. Qiu
4. Gerhard Klimeck
5. Ian A. Young
6. Daniel H. Morris
7. Runsheng Wang
8. Hao Lu
9. Alan C. Seabaugh
10. Christian Jirauschek

Papers from Mathieu Luisier's perspective

Ordered by how strongly the researchers Mathieu Luisier trusts endorse each paper. Same corpus, a different order for every researcher.

1. Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations
2. Theory of ballistic nanotransistors
3. Valley splitting in strained silicon quantum wells
4. General Synthesis of Compound Semiconductor Nanowires
5. Influence of cultivation temperature on the ligninolytic activity of selected fungal strains
6. AND T
7. Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer
8. Band-to-band tunneling in carbon nanotube field-effect transistors. (Physical Review Letters)
9. A simple quantum mechanical treatment of scattering in nanoscale transistors
10. Ballistic carbon nanotube field-effect transistors (Nature)

Their papers

• Sub-10 nm carbon nanotube transistor (2011) — 740 citations
• Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations (2006) — 390 citations
• Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling (2010) — 188 citations
• Quantum transport in two- and three-dimensional nanoscale transistors : Coupled mode effects in the nonequilibrium Green's function formalism (2006) — 173 citations
• Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors (2009) — 151 citations
• The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials (2021) — 305 citations
• Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering (2009) — 234 citations
• On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients (2009) — 156 citations