Günter Wagner
Electronic, Optical and Magnetic Materials · 2003–2017
A researcher in the Science corpus: 5 papers; trusts 2 researchers and is trusted by 1 researcher here, as inferred from the citation graph.
Subfields
- Electronic, Optical and Magnetic Materials — 59 citations into it; #2,805 of 2,886 by trust here, #1,601 by citations
- Materials Chemistry — 53 citations into it; #11,273 of 11,513 by trust here, #5,818 by citations
Whom Günter Wagner trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- Akito Kuramata (in Electronic, Optical and Magnetic Materials)
- Shigenobu Yamakoshi (in Electronic, Optical and Magnetic Materials)
Who trusts Günter Wagner
- Z. Galazka (in Electronic, Optical and Magnetic Materials)
Papers from Günter Wagner's perspective
Ordered by how strongly the researchers Günter Wagner trusts endorse each paper. Same corpus, a different order for every researcher.
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
- Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (IEEE Electron Device Letters)
- Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
- On the bulk β-Ga2O3 single crystals grown by the Czochralski method
- Development of gallium oxide power devices
- Oxygen vacancies and donor impurities in β-Ga2O3
- Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
- Czochralski growth and characterization of β‐Ga2O3 single crystals
- Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
Their papers
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (2016) — 427 citations
- $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation (2017) — 214 citations
- Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy (2016) — 145 citations
- Recent progress in the growth of β-Ga2O3 for power electronics applications (2017) — 245 citations
- Electrical and Optical Characterization of SiC (2003) — 276 citations