Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology

By D. Guo, Zhenping Wu, Peigang Li, Y. An, Han Liu, Xuncai Guo, Hui Yan, Guofeng Wang, Changlong Sun, Linghong Li and 1 more. 2014

374 citations recorded by the source corpus.

Laser molecular beam epitaxy technology has been employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates. After optimizing the growth parameters, (2¯01)-oriented β-Ga2O3 thin film was obtained. Ultraviolet-visible absorption spectrum demonstrates that the prepared β-Ga2O3 thin film shows excellent solar-blind ultraviolet (UV) characteristic with a band gap of 5.02 eV. A prototype photodetector device with a metal-semiconductor-metal structure has been fabricated using high quality β-Ga2O3 film. The device exhibits obvious photoresponse under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetectors.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/7c289434c34ffc659f00cbced5d1f2033a97c141

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Citations in the corpus

• Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy (2016, background): “Homoepitaxy of b-Ga2O3 thin films has been performed mainly by molecular beam epitaxy (MBE) leading to the fabrication of Schottky diodes and field-effect transistors (MESFETs) [1, 2, 4].”