Electrical and Optical Characterization of SiC

By G. Pensl, F. Schmid, F. Ciobanu, M. Laube, S. Reshanov, N. Schulze, K. Semmelroth, A. Schöner, Günter Wagner, H. Nagasawa. 2003

276 citations recorded by the source corpus.

Three topics are reported in this paper: (a) the determination of a temperaturedependent Hall scattering factor for holes r H,h(T) in 4H-SiC, (b) the detection of shallow Al-related defect centers in Al-doped, p-type 6H-/3C-SiC; these defects are generated either by i mplantation of any ion species or by an oxidation process and (c) the observation of absorption lines in infra red (IR) spectra, which are due to phosphorus donors in 6H-SiC.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/fac760fd95742814c47adee5a42f6ca72bef61eb

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Citations in the corpus

• Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties (2003, methodology): “The intensity of the phonon replica is in agreement with published data [44].”