Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
By M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, D. Klimm, R. Schewski, Günter Wagner. Journal of Materials Science, 2016
145 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/33761da3ffc12a288ffb2fc31a9df49811a6a39c
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “metal–organic chemical vapor deposition (MOCVD) [81]–[83], metal organic vapor phase epitaxy (MOVPE) [84]–[86], and mist-CVD [87]–[90], and physical vapor deposition (PVD) [91],”
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (2016, unknown): “7E18 cm−3 measured by CV as-grown [11].”