Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

By Farid Medjdoub, Jean-Francois Carlin, M. Gonschorek, E. Feltin, M. Py, D. Ducatteau, C. Gaquière, N. Grandjean, Erhard Kohn. International Electron Devices Meeting, 2006

192 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/2f776dcff809b3bb1a2027c67ce05c7a1276b55f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Matteo Meneghini
3. Tomás Palacios
4. Enrico Zanoni
5. Xiang Gao
6. Shiping Guo
7. Giovanni Verzellesi
8. Dong Seup Lee

In Electrical and Electronic Engineering

1. Matteo Meneghini
2. Tomás Palacios
3. Gaudenzio Meneghesso
4. Enrico Zanoni

In Electronic, Optical and Magnetic Materials

1. Xiang Gao
2. Tomás Palacios
3. Matteo Meneghini
4. Enrico Zanoni
5. Gaudenzio Meneghesso
6. Shiping Guo
7. Giovanni Verzellesi
8. Dong Seup Lee

Citations in the corpus

• 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment (2011, background): “High thermal stability of the InAlN/GaN HEMTs has also been demonstrated by showing device operation at 1000 ◦ C without serious degradation [ 6 ].”
• Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (2008, background): “InAlN/GaN HEMTs have already demonstrated high breakdown voltage, low leakage current, and high-temperature operation [49].”