Current status of AlInN layers lattice-matched to GaN for photonics and electronics
By R. Butté, Jean-Francois Carlin, E. Feltin, M. Gonschorek, S. Nicolay, G. Christmann, D. Simeonov, A. Castiglia, J. Dorsaz, H. Buehlmann and 11 more. 2007
300 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/88d8bb5015552e4a42339e9f6a1f0e9db0757e02
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance (2010, background): “high 2DEG mobility in InAlN heterostructures can be realized as well, exceeding 1000 cm(2)/V · s, by reducing alloy scattering and interface roughness [7].”