Testing the Temperature Limits of GaN-Based HEMT Devices

By D. Maier, M. Alomari, N. Grandjean, Jean-Francois Carlin, M. diForte-Poisson, C. Dua, A. Chuvilin, D. Troadec, C. Gaquière, U. Kaiser and 2 more. IEEE transactions on device and materials reliability, 2010

142 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/a7ec1be1125c481a656399968726a7d380d8d127