High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
By M. Gonschorek, Jean-Francois Carlin, E. Feltin, M. Py, N. Grandjean. 2006
311 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/57eb01f1e6ed9d21262823a33380a7f5fbfdf50c
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Materials Chemistry
Citations in the corpus
- The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs (2012, result): “8 A/mm and is comparable to the preceding experimental reports [39], [40].”