Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

By E. Arslan, S. Butun, E. Ozbay. 2009

146 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/791617a7311c0606949f1905296a890740aadfa4

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In Condensed Matter Physics

1. Jean-Francois Carlin

Citations in the corpus

• Testing the Temperature Limits of GaN-Based HEMT Devices (2010, background): “A number of metals have been investigated for AlGaN/GaN and InAlN/GaN HEMT structures, such as Ni, platinum (Pt), molybdenum (Mo), Cu, and iridium (Ir) [28]– [31] with Ni being the most commonly used contact metal.”
• Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling (2013, background): “(20 nm) than in our experiment, only PF emission component is significant even at larger reverse bias of −5 V [14].”