Low-Temperature Sintered Nanoscale Silver as a Novel Semiconductor Device-Metallized Substrate Interconnect Material
By J. Bai, Zhiye Zhang, J. Calata, Guo-Quan Lu. IEEE transactions on components and packaging technologies, 2006
356 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/f57c671e6aa6abe0dc16d6cd4c3ade0d7bc591f9
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In Electrical and Electronic Engineering
Citations in the corpus
- Die Attach Materials for High Temperature Applications: A Review (2011, background): “Various die attach materials and solders, their operating range and application possibilities [15], [19], [30]–[33], [23], [24], [35], [36], [41]–[53], [59], [60], [66]–[70], [77]–[80].”
- Processing and Characterization of Nanosilver Pastes for Die-Attaching SiC Devices (2007, methodology): “The data were obtained from the tensile tests of free-standing specimens of the sintered nanosilver paste [8].”
- High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment (2007, background): “The microporosity of the sintered silver makes the material relatively soft to accommodate possible bonding stresses [14].”
- Applying Anand model to low-temperature sintered nanoscale silver paste chip attachment (2009, background): “To make it suitable for screen/stencil-printing or syringe-dispensing like solder paste or microscale silver paste, organic components such as dispersants (or called surfactant), binders and thinners need to be added into the nanoscale silver particles [4].”
- Survey of High-Temperature Reliability of Power Electronics Packaging Components (2015, background): “In fact, the nanosilver joint shows modulus values between 6 and 9 GPa that are lower than those of commonly used solder alloys and represents about 12% of the elastic modulus of the silver bulk [58], [59].”
- Low-Temperature Sintering of Nanoscale Silver Paste for Attaching Large-Area $({>}100~{\rm mm}^{2})$ Chips (2010, methodology): “For smaller device attachment [ 12 ], [15], where the pathways for solvent evaporation and binder burnout are short, no additional drying of the paste is needed before mounting the device, and no external pressure is necessary in the sintering stage to obtain sufficient bond strength, e.g., 20 MPa.”
- Thermomechanical Reliability of Low-Temperature Sintered Silver Die Attached SiC Power Device Assembly (2006, background): “In our previous study [11], a nanoscale silver paste has demonstrated”