High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment

By J. Guofeng Bai, Jian Yin, Zhiye Zhang, Guo-Quan Lu, J. D. van Wyk. IEEE Transactions on Advanced Packaging, 2007

168 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d9780dde9f49ebc229eb88e4162ac2ffbf32ec70

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Vemal Raja Manikam
2. Kuan Yew Cheong

Citations in the corpus

• A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues (2020, background): “Silver sintering is also a bonding method renowned for low temperature process (>220oC) and high melting point (961oC) which has many advantages such as high thermal conductivity and enhanced reliability in thermal and power cycling [79], [80].”
• Die Attach Materials for High Temperature Applications: A Review (2011, background): “[65], [68] reported successfully on the usage of sintered Ag nanopaste as a die attach material in their literature work.”
• State of the art of high temperature power electronics (2009, methodology): “have presented a silver sintering solution using nanometre-sized powder [23],[24].”