Thermomechanical Reliability of Low-Temperature Sintered Silver Die Attached SiC Power Device Assembly

By J. Bai, Guo-Quan Lu. IEEE transactions on device and materials reliability, 2006

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Applying Anand model to low-temperature sintered nanoscale silver paste chip attachment (2009, background): “proved better electrical and outstanding thermal management for low-temperature sintered silver joints [6,7].”
Low-Temperature Sintering of Nanoscale Silver Paste for Attaching Large-Area $({>}100~{\rm mm}^{2})$ Chips (2010, methodology): “Excellent reliability and mechanical properties were obtained with the sintered joints, and they were demonstrated to support high-temperature operation of SiC devices with outstanding reliability [15], [ 16 ].”
Processing and Characterization of Nanosilver Pastes for Die-Attaching SiC Devices (2007, methodology): “3-mm-thick copper layers were coated with 6- m-thick nickel followed by either a 4- m layer of gold or silver [11].”
Die Attach Materials for High Temperature Applications: A Review (2011, methodology): “Maximum die-shear strength of about 38 MPa was obtained when die shear tests were performed for post-sintered DBC substrates coated with Ag [72].”
High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment (2007, background): “Strong adhesion (up to 40 MPa by the die-shear tests [17]) was formed by atomic diffusion during”