Kuang Sheng
Condensed Matter Physics · 2014–2019
A researcher in the Science corpus: 3 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 32 citations into it
- Electrical and Electronic Engineering — 30 citations into it
Whom Kuang Sheng trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- Kevin J. Chen (in Condensed Matter Physics)
Papers from Kuang Sheng's perspective
Ordered by how strongly the researchers Kuang Sheng trusts endorse each paper. Same corpus, a different order for every researcher.
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations (IEEE transactions on power electronics)
- VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress (IEEE Electron Device Letters)
- 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance (IEEE Electron Device Letters)
- Punch-through in short-channel AlGaN/GaN HFETs (IEEE Transactions on Electron Devices)
- Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain (International Symposium on Power Semiconductor Devices and IC's)
- Trapping effects in GaN and SiC microwave FETs (Proceedings of the IEEE)
- Fundamentals of Power Semiconductor Devices
- Carbon impurities and the yellow luminescence in GaN
- Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
Their papers
- Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses (2019) — 168 citations
- Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019) — 149 citations
- High Temperature Stability and the Performance Degradation of SiC MOSFETs (2014) — 139 citations