Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate
By Ki-Sik Im, J. Ha, Ki‐Won Kim, Jongsub Lee, Dong‐Seok Kim, S. Hahm, Jung-Hee Lee. IEEE Electron Device Letters, 2010
158 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/d908b5232a40bc3cc683cea8d5786607aa5d4630
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In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique (2013, background): “previously reported record value of 225 cm2/V·s [18] in fully recessed GaN MOSFET [7], [8], [17], [18].”