High-temperature electronics - a role for wide bandgap semiconductors?

By P. Neudeck, R. Okojie, Liangyu Chen. Proceedings of the IEEE, 2002

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A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues (2020, background): “Theoretical studies show that SiC devices can be operated well beyond 500 ◦C [13], [33], indicating that they are a highly suited candidate for high-temperature electronics.”
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, background): “The ability and suitability of these devices to operate at much higher temperatures due to their low intrinsic carrier concentrations and deep-level dopants is compelling for many automotive, aerospace, military and downhole applications [187, 188].”
The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review (2015, background): “materials such as gallium nitride and aluminum nitride, silicon carbide has significantly lower crystal dislocations [16], [18].”
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices (2020, background): “Another major advantage of WBG materials is that WBG devices have the potential to operate under much higher temperatures [21].”
A review of high-temperature electronics technology and applications (2015, background): “5 Intrinsic carrier density in Si, SiC and GaN versus temperature [16]”