Application-based review of GaN HFETs

By Edward A. Jones Jr., Fred Wang, Burak Ozpineci. IEEE Workshop on Wide Bandgap Power Devices and Applications, 2014

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A Modular-Designed Three-Phase High-Efficiency High-Power-Density EV Battery Charger Using Dual/Triple-Phase-Shift Control (2018, background): “For the DAB stage (P1 − P4 , S1 − S4), wide-bandgap (WBG) devices such as GaN HEMTs and SiC MOSFETs are excellent candidates to enhance the efficiency and power density, due to their ultrafast switching transitions and ultralow gate-drive power [13].”
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations (2017, methodology): “sistor can be fabricated using p-GaN gate technique [3]–[7], gate recess [7]–[9] or plasma treatment [10]–[12].”
A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI (2018, background): “short dead times can be maintained, minimizing the time during which significant reverse conduction loss is incurred in the synchronous GaN FET [19], [21].”
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges (2016, methodology): “Some manufacturers internally connect the substrate and source of their GaN HFETs, while others choose to electrically isolate the Si substrate to prevent current from flowing through it.”