Dionyz Pogany
Condensed Matter Physics · 2006–2012
A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 9 citations into it
Whom Dionyz Pogany trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- Jan Kuzmik (in Condensed Matter Physics)
Papers from Dionyz Pogany's perspective
Ordered by how strongly the researchers Dionyz Pogany trusts endorse each paper. Same corpus, a different order for every researcher.
- Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method
- InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal
- Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
- Mechanism of anomalous current transport in n-type GaN Schottky contacts
- Current instabilities in GaN-based devices (IEEE Electron Device Letters)
- Power electronics on InAlN/(In)GaN: Prospect for a record performance (IEEE Electron Device Letters)
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)
- Semiconductor Material and Device Characterization, 3rd Edition
- Defect engineering of two-dimensional transition metal dichalcogenides
Their papers
- Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs (2012) — 138 citations
- InAlN/GaN HEMTs: a first insight into technological optimization (2006) — 141 citations