E. Feltin
Condensed Matter Physics · 2001–2010
A researcher in the Science corpus: 9 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 37 citations into it
- Electronic, Optical and Magnetic Materials — 24 citations into it
Whom E. Feltin trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- Jan Kuzmik (in Condensed Matter Physics)
Papers from E. Feltin's perspective
Ordered by how strongly the researchers E. Feltin trusts endorse each paper. Same corpus, a different order for every researcher.
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method
- InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal
- Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
- Mechanism of anomalous current transport in n-type GaN Schottky contacts
- Current instabilities in GaN-based devices (IEEE Electron Device Letters)
- Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)
- Semiconductor Material and Device Characterization, 3rd Edition
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (IEEE transactions on device and materials reliability)
- Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures
Their papers
- Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity (2008) — 269 citations
- Room-temperature polariton lasing in semiconductor microcavities. (2007) — 775 citations
- Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices? (2006) — 192 citations
- High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures (2006) — 311 citations
- 205-GHz (Al,In)N/GaN HEMTs (2010) — 157 citations
- Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23) (2008) — 169 citations
- Current status of AlInN layers lattice-matched to GaN for photonics and electronics (2007) — 300 citations
- Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials (2005) — 162 citations
- Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy (2001) — 260 citations