On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques

By Ernest Y. Wu, Rolf-Peter Vollertsen. 2002

156 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1149cacba1d331fa73db623f67688d9e84337238

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In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Shimeng Yu

Citations in the corpus

• Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity (2009, methodology): “Since the SET process is a re-breakdown of the recovery oxide layer, the low Weibull slope is expected due to the very thin (2~3 nm) [4] and defective recovered oxide layer [ 5 ].”