Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets
By K. Kao, A. Verhulst, William G. Vandenberghe, B. Sorée, Wim Magnus, D. Leonelli, Guido Groeseneken, K. D. Meyer. IEEE Transactions on Electron Devices, 2012
135 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/620c7c7cd9c09b7e034d20c71b27320a58f56a5f
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In Electrical and Electronic Engineering
Citations in the corpus
- Design of U-Shape Channel Tunnel FETs With SiGe Source Regions (2014, background): “To improve the drive current of TFET, many novel device structures have been proposed recently [3]–[7].”